c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics winsem i m icroelectronics wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet 1011 wt-f049-rev.a1 sep.2013 features ? 2a,600v,r ds(on) (max 5.0 ? )@v gs =10v ? ultra-low gate charge(typical 5.3 nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe, v dmos technology. this latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch mode power supply . absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 2.0 a continuous drain current(@tc=100 ) 1.3 a i dm drain current pulsed (note1) 8 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 121 mj e ar repetitive avalanche energy (note1) 4.5 mj dv/dt peak diode recovery dv /dt (note3) 4.4 v/ ns p d total power dissipation(@tc=25 ) 46 w derating factor above 25 0.35 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 2.7 /w r qja thermal resistance , junction-to -ambient - - 110 /w g d s d g s dpak dpak dpak dpak
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 2 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 10 a v ds =480v,tc=125 - 100 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 600 - - v gate threshold voltage v gs(th) v ds = v gs b ,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 1 a - 4.5 5.0 ? forward transconductance gfs v ds = 50 v,i d = 1 a - 2.25 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 190 230 pf reverse transfer capacitance c rss - 1.8 2.1 output capacitance c oss - 15 20 switching time turn-on rise time tr v dd = 300 v, i d = 2 a r g = 25 ? (note4,5) - 23 45 ns turn-on delay time t d( on ) - 7 23 turn-off fall time tf - 24 46 turn-off delay time t d( off ) - 22 43 total gate charge(gate-source plus gate-drain) qg v dd = 480 v , v gs =10v, i d = 2 a (note 4 ,5) - 5.3 6 nc gate-source charge qgs - 1.7 - gate-drain("miller") charge qgd - 1.8 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 2.0 a pulse drain reverse current i drp - - - 8.0 a forward voltage(diode) v dsf i dr = 2.0 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 2. a,v gs =0v , di dr / dt =100 a / s - 180 - ns reverse recovery charge qrr - 0.72 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 56 m h i as = 2 a,v dd = 50 v, r g = 25 ? ,starting t j =25 3.i sd 2 a,di/dt 200 a/us,v dd www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 3 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.1 on- region characteristics fig.2 transfer characteristics fig.3 on resistance variation vs drain current and gate voltage fig.4 body diode forward voltage variation with source current and temperature fig.5 capacitance characteristics fig.6 gate charge characteristics n o te s : 1 .2 5 0 u s p u ls e te s t 2 .tc =2 5 c t o p v g s 1 5 v 1 0 v 8 v 7 v 6 . 5 v 6 v 5 v 5 . 5 v b o t t o m 1 1 0 0 . 1 1 v [v ] d s i [ a ] d 150 c 25 c notes: 1.250us pulse test 2.v =40v d s 2 4 6 8 1 0 0 . 1 1 1 0 v [v] g s i [ a ] d v =10v g s v =20v g s note:t =25 c j 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 3 . 5 4 . 0 4 . 5 5 . 0 5 . 5 6 . 0 6 . 5 7 . 0 7 . 5 i [a] d r [ ] d s ( o n ) 150 c 25 c notes: 1.250us pulse test 2.v =0v g s 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 1 . 3 0 . 1 1 v [v] s d i [ a ] d r ciss=cgs+cgd(cds=shorted) coss= cds+ cgd c rss= c gd 1 0 - 1 not es: 1. v ds = 0v 2. f = 1mhz 1 0 0 1 0 1 0 4 0 8 0 1 2 0 1 6 0 2 0 0 2 4 0 2 8 0 3 2 0 3 6 0 4 0 0 v [v] d s c a p a c i t a n c e [ p f ] c i s s c r s s c o s s q toltal gate charge[nc] g 0 1 2 3 4 5 0 2 4 6 8 1 0 1 2 v g a t e s o u r c e v o l t a g e [ v ] g s v =120v d s v =480v d s v =300v d s
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 4 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.7 breakdown voltage variation vs,temperature fig. 11 transient thermal response curve fig.8 on-resistance variation vs.temperature - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 8 0 . 9 1 . 0 1 . 1 1 . 2 t [ c] j b v ( n o r m a l i z e d ) d s s notes: 1.v =0v 2.i =250ua g s d 0 . 0 - 7 5 - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 - 7 5 0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0 t [ c] j r ( n o r m a l i z e d ) d s ( o n ) n otes: 1.v =10v 2.i =1.0a g s d 1 0 0 1 0 1 1 0 2 1 0 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 v [v] d s i [ a ] d d c 1 0 m s 1 m s 1 0 0 u s operation in this a rea is limited by r ds(on) notes: 1 . t c =25 c 2 .t =150 c single pulse j 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 . 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 t c [ c] i [ a ] d fig. 9 maximum safe operation area fig. 10 maximum drain current vs case temperature d 0 5 = . 0 . 2 0 . 1 0 . 0 5 0 . 0 2 0 . 0 1 single pulse 1.z (t)=2.87 c/w max. 2.duty factor,d=t1/t2 3.t *t =p * j c jm c dm z (t) j c * n o te p d m t 1 t 2 t ,square wave pulse duration [sec] 1 z ( t ) , t h e r m a l r e s p o n s e j c 1 0 - 5 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 1 1 0 - 1 1 0 0
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 5 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.12 gate test circuit & waveform fig.13 resistive switching test circuit & waveform fig.14 unclamped inductive switching test circuit & waveform 1 0 v r g l i d v d d e a s = b v d s s b v d s s - v d d 1 2 l i a s 2 d u t b v d s s i a s i t d ( ) t i m e v d s ( ) t t p t p v d s v d d 1 0 v r g v g s v d s r l v d s v g s d u t 9 0 % 1 0 % t d (o n ) t r t d (o ff) t o n t o f f t f v d d 1 2 v 2 0 0 n f 3 m a 3 0 0 n f 5 0 k v g s d u t v g s v d s 1 0 v c h a rg e same type a s d u t q g s q g d q g
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 6 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics fig.15 peak diode recovery dv/dt test circuit & waveform v d s d u t i s d l driver s am e type a s d u t r g v g s v d d dv/dt controlled by r g i conteolled by pulse period s d v g s (driver) d = gate pulse width gate pulse period 1 0 v i s d i ,body diode forward current f m (d u t) v d s (d u t) i r m di/dt body diode reverse current body diode recovery dv/dt v d d body diode forward voltage drop v s d
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 7 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics dpak package dimension symbol m i n m a x a 2 19 . 2 38 . a 1 - 0 13 . b 0 . 6 4 0 89 . c 0 46 . 0 61 . d 5 97 . 6 22 . d 1 0 89 . 1 27 . e 6 35 . 6 73 . e 1 5 21 . 5 46 . e 2 28typ . f 0 46 . 0 61 . h 9 65 . 10 41 . l 1 40 . 1 78 . l 2 0 64 . 1 01 . 0 8 a f e e 1 d 1 d l 2 b c l a 1 h e u n i t : m m
www.winsemi.com tel : +86- 755-8250 6288 fax : +86- 755-8250 6299 8 / 8 wf d2 n60b product description silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics win sem i m icroelectron ics note: note: note: note: 1. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us. 2. please do not exceed the absolute maximum ratings of the device when circuit designing. 3. winsemi microelectronics co., ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. contact: contact: contact: contact: winsemi microelectronics co., ltd. add:futian district, shenzhen tian an cyber tech plaza two east wing 1002 post code : 518040 tel : +86-755-8250 6288 fax : +86-755-8250 6299 web site : www.winsemi.com
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